View APTGT100A60T3AG_4601644.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

APTGT100A60T3AG
Phase leg Trench + Field Stop IGBT Power Module
29 30 31 32 13
VCES = 600V IC = 100A @ Tc = 100C
Application * * * * Welding converters Switched Mode Power Supplies Uninterruptible Power Supplies Motor control
4 3
Features
26 22 27 23 28 25 R1
*
8 7
16
18
19
20
14
28 27 26 25 29 30
23 22
20 19 18 16 15
* * * * *
Trench + Field Stop IGBT Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated Very low stray inductance Kelvin emitter for easy drive Internal thermistor for temperature monitoring High level of integration AlN substrate for improved thermal performance
Benefits
31 32 2 3 4 7 8 10 11 12 14 13
Pins 29/30/31/32 must be shorted together Pins 26/27/28/22/23/25 must be shorted together to achieve a phase leg Pins 16/18/19/20 must be shorted together
* * * * *
Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Solderable terminals both for power and signal for easy PCB mounting Low profile RoHS Compliant
Absolute maximum ratings
TC = 25C TC = 100C TC = 25C TC = 25C Tj = 150C
May, 2009 1-5 APTGT100A60T3AG - Rev 0
Symbol VCES IC ICM VGE PD RBSOA
Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate - Emitter Voltage Maximum Power Dissipation Reverse Bias Safe Operating Area
Max ratings 600 150 100 200 20 416 200A @ 550V
Unit V A V W
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com
www.microsemi.com
APTGT100A60T3AG
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic ICES VCE(sat) VGE(th) IGES Zero Gate Voltage Collector Current Collector Emitter Saturation Voltage Gate Threshold Voltage Gate - Emitter Leakage Current Test Conditions VGE = 0V, VCE = 600V Tj = 25C VGE =15V IC = 100A Tj = 150C VGE = VCE , IC = 1.5 mA VGE = 20V, VCE = 0V Min Typ 1.5 1.7 5.8 Max 250 1.9 6.5 400 Unit A V V nA
5.0
Dynamic Characteristics
Symbol Cies Coes Cres QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eon Eoff Isc Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn on Energy Turn off Energy Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= 15V ; VCE=300V IC=100A Inductive Switching (25C) VGE = 15V VBus = 300V IC = 100A RG = 3.3 Inductive Switching (150C) VGE = 15V VBus = 300V IC = 100A RG = 3.3 VGE = 15V Tj = 25C VBus = 300V Tj = 150C IC = 100A Tj = 25C RG = 3.3 Tj = 150C VGE 15V ; VBus = 360V tp 6s ; Tj = 150C Min Typ 6100 390 190 1.1 115 45 225 55 130 50 300 70 0.4 0.875 2.5 3.5 500 Max Unit pF C
ns
ns
mJ mJ A
Reverse diode ratings and characteristics
Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF VF trr Qrr Er Maximum Reverse Leakage Current DC Forward Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Energy IF = 100A VR = 300V IF = 100A VGE = 0V Test Conditions VR=600V Tj = 25C Tj = 150C
Tc = 100C
Min 600
Typ
Max 150 400
Unit V A A
di/dt =2500A/s
Tj = 150C Tj = 25C Tj = 150C
10.7 1.2 2.4
mJ
www.microsemi.com
2-5
APTGT100A60T3AG - Rev 0
Tj = 25C Tj = 150C Tj = 25C Tj = 150C Tj = 25C
100 1.6 1.5 100 150 5.1
2
V ns C
May, 2009
APTGT100A60T3AG
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Thermal Resistance Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight IGBT Diode 2500 -40 -40 -40 2.5 Min Typ Max 0.36 0.57 175 125 100 4.7 110 Unit
C/W
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
V C N.m g
To heatsink
M4
Temperature sensor NTC (see application note APT0406 on www.microsemi.com for more information).
Symbol R25 R25/R25 B25/85 B/B Characteristic Resistance @ 25C T25 = 298.15 K TC=100C
RT = R25 1 1 RT: Thermistor value at T exp B25 / 85 T - T 25
T: Thermistor temperature
Min
Typ 50 5 3952 4
Max
Unit k % K %
SP3 Package outline (dimensions in mm)
1
12
See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com
www.microsemi.com
3-5
APTGT100A60T3AG - Rev 0
May, 2009
17
28
APTGT100A60T3AG
Typical Performance Curve
Output Characteristics (VGE=15V) Output Characteristics 200 175 150 IC (A)
TJ=150C TJ = 150C VGE=19V
200 175 150
IC (A)
TJ=25C TJ=125C
125 100 75 50 25 0 0 0.5 1
TJ=25C
125 100 75 50 25 0
VGE=13V VGE=15V
VGE=9V
1.5 VCE (V)
2
2.5
3
0
0.5
1
1.5 2 VCE (V)
2.5
3
3.5
200 175 150 125 IC (A) 100 75 50 25 0 5
Transfert Characteristics 7
TJ=25C
Energy losses vs Collector Current 6 5 E (mJ) 4 3 2
Er VCE = 300V VGE = 15V RG = 3.3 TJ = 150C
Eoff
TJ=125C TJ=150C TJ=25C
1 0 11 12 0 25 50 75
Eon
6
7
8
9
10
100 125 150 175 200 IC (A)
VGE (V) Switching Energy Losses vs Gate Resistance 8
VCE = 300V VGE =15V IC = 100A TJ = 150C
Reverse Bias Safe Operating Area 250
6 E (mJ)
Eoff
200 IF (A)
Eon
150 100
4
2
Eon
Er
50 0
VGE=15V TJ=150C RG=3.3
0 0 5 10 15 20 25 Gate Resistance (ohms) 30
0
100
200
300 400 VCE (V)
500
600
700
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 Thermal Impedance (C/W) 0.9 0.3 0.7 0.5 0.3 0.1 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10
IGBT
0.2
Rectangular Pulse Duration in Seconds
www.microsemi.com
4-5
APTGT100A60T3AG - Rev 0
May, 2009
APTGT100A60T3AG
Operating Frequency vs Collector Current Fmax, Operating Frequency (kHz) 100
ZCS VCE=300V D=50% RG=3.3 TJ=150C
Forward Characteristic of diode 200 175 150 125 IF (A) 100 75
TJ=125C TJ=150C
75
ZVS
Tc=85C
50
25
Hard switching
50 25 0 75 100 IC (A) 125 150 0
TJ=25C
0 25 50
0.4
0.8
1.2 1.6 VF (V)
2
2.4
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.6 Thermal Impedance (C/W) 0.9 0.5 0.4 0.3 0.2 0.1 0.7 0.5 0.3 0.1 Single Pulse 0.0001 0.001 0.01 0.1 1 10
Diode
0.05 0 0.00001
Rectangular Pulse Duration in Seconds
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
www.microsemi.com
5-5
APTGT100A60T3AG - Rev 0
May, 2009

▲Up To Search▲

Price & Availability of APTGT100A60T3AG

	To Download APTGT100A60T3AG Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .